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Jaeger vs. computerBATEY, J. E.Materials evaluation. 1996, Vol 54, Num 9, pp 974-979, issn 0025-5327Article

Quadrupole gas analysersBATEY, J. H.Vacuum. 1987, Vol 37, Num 8-9, pp 659-668, issn 0042-207XArticle

CONFORT RANGE THERMAL STORAGE.BERLAD AL; LIN HC; SALZANO FJ et al.1977; ENERGY; G.B.; DA. 1977; VOL. 2; NO 2; PP. 161-169; BIBL. 17 REF.Article

Energy considerations in the deposition of high-quality plasma-enhanced CVD silicon dioxideCHAPPLE-SOKOL, J. D; PLISKIN, W. A; CONTI, R. A et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 12, pp 3723-3726, issn 0013-4651Article

TIME OF DAY-PRICING OF ELECTRICAL ENERGY: DOES IT PROMOTE THE PUBLIC INTEREST.BERLAD AL; SALZANO FJ; HOPPE RJ et al.1978; ENERGY; GBR; DA. 1978; VOL. 3; NO 6; PP. 779-784; BIBL. 9 REF.Article

Low-temperature deposition of high-quality silicon dioxide by plasma-enhanced chemical vapor depositionBATEY, J; TIERNEY, E.Journal of applied physics. 1986, Vol 60, Num 9, pp 3136-3145, issn 0021-8979Article

Properties and thermal stability of the SiO2/GaAs interface with different surface treatmentsPACCAGNELLA, A; CALLEGARI, A; BATEY, J et al.Applied physics letters. 1990, Vol 57, Num 3, pp 258-260, issn 0003-6951Article

Electrical characteristics of very thin SiO2 deposited at low substrate temperaturesBATEY, J; TIERNEY, E; NGUYEN, T. N et al.IEEE electron device letters. 1987, Vol 8, Num 4, pp 148-150, issn 0741-3106Article

Ballistic electron transport in thin silicon dioxide filmsFISCHETTI, M. V; DIMARIA, D. J; DORI, L et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 9, pp 4404-4415, issn 0163-1829Article

Energy band-gap discontinuities in GaAs:(Al,Ga)As heterojunctionsBATEY, J; WRIGHT, S. L; DIMARIA, D. J et al.Journal of applied physics. 1985, Vol 57, Num 2, pp 484-487, issn 0021-8979Article

Low-rate plasma oxidation of Si in a dilute oxygen/helium plasma for low-temperature gate quality Si/SiO2 interfacesBRIGHT, A. A; BATEY, J; TIERNEY, E et al.Applied physics letters. 1991, Vol 58, Num 6, pp 619-621, issn 0003-6951Article

Unpinned GaAs MOS capacitors and transistorsSANDIP TIWARI; WRIGHT, S. L; BATEY, J et al.IEEE electron device letters. 1988, Vol 9, Num 9, pp 488-490, issn 0741-3106Article

Direct observation of ballistic electrons in silicon dioxideDIMARIA, D. J; FISCHETTI, M. V; BATEY, J et al.Physical review letters. 1986, Vol 57, Num 25, pp 3213-3216, issn 0031-9007Article

Some Characteristics of Interaction in Foreign Language ClassroomsWESTGATE, D; BATEY, J; BROWNLEE, J et al.British Educational Research Journal Nottingham. 1985, Vol 11, Num 3, pp 271-281Article

Low hydrogen content stoichiometric silicon nitride films deposited by plasma-enhanced chemical vapor depositionPARSONS, G. N; SOUK, J. H; BATEY, J et al.Journal of applied physics. 1991, Vol 70, Num 3, pp 1553-1560, issn 0021-8979Article

E' centers and nitrogen-related defects in SiO2 filmsSTATHIS, J. H; CHAPPLE-SOKOL, J; TIERNEY, E et al.Applied physics letters. 1990, Vol 56, Num 21, pp 2111-2113, issn 0003-6951Article

Thin-film transistors incorporating a thin high-quality PECVD SiO2 gate dielectricBUCHANAN, D. A; BATEY, J; TIERNEY, E et al.IEEE electron device letters. 1988, Vol 9, Num 11, pp 576-678, issn 0741-3106Article

A comparison of the photovoltaic and electroluminescent effects in GaP/Langmuir-Blodgett film diodesPETTY, M. C; BATEY, J; ROBERTS, G. G et al.IEE proceedings. Part I. Solid-state and electron devices. 1985, Vol 132, Num 3, pp 133-139, issn 0143-7100, part 1Article

Digital Paper for reflective displaysMILES, M; LARSON, E; CHUI, C et al.Journal of the Society for Information Display. 2003, Vol 11, Num 1, pp 209-215, issn 1071-0922, 7 p.Conference Paper

Information retrieval from the inductively coupled plasma : Plenary lectureSHARP, B. L; BATEY, J; BEGLEY, I. S et al.Journal of analytical atomic spectrometry (Print). 1999, Vol 14, Num 2, pp 99-108, issn 0267-9477Conference Paper

High-quality deposited gate oxide MOSFET's and the importance of surface preparationSTASIAK, J; BATEY, J; TIERNEY, E et al.IEEE electron device letters. 1989, Vol 10, Num 6, pp 245-248, issn 0741-3106Article

GaP/phthalocyanine Langmuir―Blodgett film electroluminescent diodeBATEY, J; PETTY, M. C; ROBERTS, G. G et al.Electronics Letters. 1984, Vol 20, Num 12, pp 489-491, issn 0013-5194Article

CoFe2O4 spinel protection coating thermally converted from the electroplated Co―Fe alloy for solid oxide fuel cell interconnect applicationBI, Z. H; ZHU, J. H; BATEY, J. L et al.Journal of power sources (Print). 2010, Vol 195, Num 11, pp 3605-3611, issn 0378-7753, 7 p.Article

Fractionation in gas inlets for PPA calibrationBATEY, J. H.Vacuum. 1993, Vol 44, Num 5-7, pp 639-642, issn 0042-207XConference Paper

Thermal desorption from mass spectrometer filamentsBATEY, J. H.Vacuum. 1992, Vol 43, Num 1-2, pp 15-19, issn 0042-207XConference Paper

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